Performance Analysis of Lateral PIN Germanium Photodetectors for Silicon-Based Optical Interconnection

Emerging fields such as 5G communication, artificial intelligence and Internet of Things have put forward strict requirements for communication systems. Optical interconnection with the characteristics of low delay, low power consumption and large capacity has attracted wide attention, among which optical interconnection based on silicon optoelectronic technology is one of the best technology choices. In this paper, optical absorption analysis of germanium photodetectors with lateral PIN structure for optical interconnection is carried out by finite difference time domain method. It is found that the light coupling mode and the size of germanium absorption region have obvious influence on the detector's responsiveness performance. At present, with the rapid development of information technology, the performance requirements of photodetectors are getting higher and higher. The development of this research is helpful to optimize the structural design of germanium photodetectors and improve their response performance, so as to provide strong support for the development of 5G communication, artificial intelligence and Internet of things.