A Study on GaN MMIC Power Amplifier Stability-Performance Design Tradeoffs at X Band

This work presents a measured comparison of two MMIC power amplifiers (PAs) that have nearly the same design except for different degree of on-chip stabilization. In MMIC design, it is often necessary to overdesign stability because of the difficulty of post-fabrication correction, but this comes at the cost of in-band RF performance. As an example of this tradeoff, we compare two different X-band MMIC PAs, one of which is unstable without off-chip capacitance. The less stable design exhibits 0.58 dB higher gain and 3.4 percentage point higher efficiency at the design frequency of 10 GHz.

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Publication Details

Published
2025-04-14
DOI
https://doi.org/10.1109/wamicon64429.2025.11004121
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

A Study on GaN MMIC Power Amplifier Stability-Performance Design Tradeoffs at X Band

Taylor W. Barton, Brian J. Rautio
GaN-based semiconductor devices and materials
article

A Study on GaN MMIC Power Amplifier Stability-Performance Design Tradeoffs at X Band

Taylor W. Barton, Brian J. Rautio
article en

Abstract

This work presents a measured comparison of two MMIC power amplifiers (PAs) that have nearly the same design except for different degree of on-chip stabilization. In MMIC design, it is often necessary to overdesign stability because of the difficulty of post-fabrication correction, but this comes at the cost of in-band RF performance. As an example of this tradeoff, we compare two different X-band MMIC PAs, one of which is unstable without off-chip capacitance. The less stable design exhibits 0.58 dB higher gain and 3.4 percentage point higher efficiency at the design frequency of 10 GHz.

Analog Devices (United States) (US), University of Colorado Boulder (US)
Affordable and clean energy
Openalex Percentile: Top 93%
GaN-based semiconductor devices and materials
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