A Study on GaN MMIC Power Amplifier Stability-Performance Design Tradeoffs at X Band
This work presents a measured comparison of two MMIC power amplifiers (PAs) that have nearly the same design except for different degree of on-chip stabilization. In MMIC design, it is often necessary to overdesign stability because of the difficulty of post-fabrication correction, but this comes at the cost of in-band RF performance. As an example of this tradeoff, we compare two different X-band MMIC PAs, one of which is unstable without off-chip capacitance. The less stable design exhibits 0.58 dB higher gain and 3.4 percentage point higher efficiency at the design frequency of 10 GHz.
Authors
- Taylor W. Barton (ORCID: https://orcid.org/0000-0001-6962-0740)
- Brian J. Rautio
Institutions
- Analog Devices (United States) (US)
- University of Colorado Boulder (US)
Publication Details
- Published
- 2025-04-14
- DOI
- https://doi.org/10.1109/wamicon64429.2025.11004121
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00