Simultaneous Measurement of Temperature and Salinity Based on GaN Monolithic Devices

Precise measurement of temperature and salinity is crucial for marine engineering, resource exploitation, and environmental protection. However, developing a compact device capable of simultaneously measuring both parameters remains a considerable challenge. This study presents a GaN monolithic device that integrates a light-emitting diode (LED) and a photodetector (PD) on a single GaN-on-sapphire chip. Increased salinity reduces the light transmitted to the PD through the sapphire waveguide, decreasing the photocurrent of the PD. Rising temperatures narrow the space charge region, lowering the forward voltage of the PD. Through a signal decoupling of the photocurrent and forward voltage using a linear matrix, salinity with a sensitivity of 0.634 μA/% within a range of 0–7 % and temperature with a sensitivity of 1.53 mV/°C within a range of 5–40 °C can be extracted. The potential applications of this device in practical seawater monitoring are also explored.

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Publication Details

Journal
IEEE Transactions on Instrumentation and Measurement
Published
2025-01-01
DOI
https://doi.org/10.1109/tim.2025.3571106
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
5.03

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article

Simultaneous Measurement of Temperature and Salinity Based on GaN Monolithic Devices

Dongmiao Liu, Kwai Hei Li, Xiaofang Gao, Jingyan Wang et al.
4 citations
IEEE Transactions on Instrumentation and Measurement
GaN-based semiconductor devices and materials
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article

Simultaneous Measurement of Temperature and Salinity Based on GaN Monolithic Devices

Dongmiao Liu, Kwai Hei Li, Xiaofang Gao, Jingyan Wang, Ling Zhu, Z.Y. Ye, Guiying Deng
article en
4 citations

Abstract

Precise measurement of temperature and salinity is crucial for marine engineering, resource exploitation, and environmental protection. However, developing a compact device capable of simultaneously measuring both parameters remains a considerable challenge. This study presents a GaN monolithic device that integrates a light-emitting diode (LED) and a photodetector (PD) on a single GaN-on-sapphire chip. Increased salinity reduces the light transmitted to the PD through the sapphire waveguide, decreasing the photocurrent of the PD. Rising temperatures narrow the space charge region, lowering the forward voltage of the PD. Through a signal decoupling of the photocurrent and forward voltage using a linear matrix, salinity with a sensitivity of 0.634 μA/% within a range of 0–7 % and temperature with a sensitivity of 1.53 mV/°C within a range of 5–40 °C can be extracted. The potential applications of this device in practical seawater monitoring are also explored.

IEEE Transactions on Instrumentation and MeasurementVol. 74
Shenzhen University (CN), Southern University of Science and Technology (CN)
National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 5%
GaN-based semiconductor devices and materials
5.03
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