Quantitative Analysis on Multi-Factor Coupling Influence Effects of Single Event Transient Characteristic Dependence of 22-nm FDSOI Circuits

In this work, heavy-ion irradiation was performed for single-event transient (SET) characteristics research on characterization test chips designed in 22 nm fully depleted silicon-on-insulator (FDSOI) technology. SET pulse widths were obtained under various designed conditions in order to reveal the coupling influence effects between factors, including layout style in particular the CNRX structure, supply voltage, circuit structure, drive strength and LET value. The contribution of the influencing factors is quantified. The results show that the stacked structure and higher drive strength are the prior factors to reduce the SET pulse width. The TCAD 3D-mode simulations were run to explore the influence of supply voltage on bipolar amplification and the voltage fluctuation in output of inverter. The research results can support the flexible selection of low-cost radiation hardened methods considering conventional performance. In addition, the influence of unique continuous active diffusion (CNRX) structure in the FDSOI technology on SET characteristics between inverter, NAND gate and NOR gate was discussed.