A Low-Power LTPO Scan Driver Circuit Using DC Power Supplied Buffer
This paper proposes a novel low-temperature polycrystalline silicon and oxide (LTPO) scan driver circuit integrating p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and n-channel metal-oxide (MOx) TFTs. The proposed circuit employs a complementary metal-oxide-semiconductor inverter as an output buffer, allowing low-level voltage to be delivered from a DC power supply to the output node without relying on clock-supplied bootstrapping, which is typically required in most scan driver circuits to drive the output buffer. This design significantly lowers dynamic power consumption by up to 74% by reducing the power consumption due to charging/discharging the parasitic capacitance of the buffer TFT by the clock signals compared with the conventional LTPO scan driver circuits utilizing the clock-supplied bootstrapping method. Additionally, the proposed circuit reduces the positive bias applied to MOx TFTs to alleviate stress conditions effectively. Therefore, the proposed circuit can improve long-term reliability by mitigating the threshold voltage shifts of MOx TFTs.
Authors
- Hwarim Im (ORCID: https://orcid.org/0000-0001-5702-1388)
- KeeChan Park (ORCID: https://orcid.org/0000-0002-6543-4913)
- Hui‐Sung Moon (ORCID: https://orcid.org/0000-0001-9480-1295)
- Sang-Woon Lee (ORCID: https://orcid.org/0000-0002-0904-9391)
- HyeongMin Kim
- YiKyoung You
- JungSuk Oh
- S.S. Kim
- Nack‐Hyeon Keum
Institutions
- Samsung (South Korea) (KR)
- Konkuk University (KR)
Publication Details
- Journal
- IEEE Journal of the Electron Devices Society
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jeds.2025.3571171
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00