A Low-Power LTPO Scan Driver Circuit Using DC Power Supplied Buffer

This paper proposes a novel low-temperature polycrystalline silicon and oxide (LTPO) scan driver circuit integrating p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and n-channel metal-oxide (MOx) TFTs. The proposed circuit employs a complementary metal-oxide-semiconductor inverter as an output buffer, allowing low-level voltage to be delivered from a DC power supply to the output node without relying on clock-supplied bootstrapping, which is typically required in most scan driver circuits to drive the output buffer. This design significantly lowers dynamic power consumption by up to 74% by reducing the power consumption due to charging/discharging the parasitic capacitance of the buffer TFT by the clock signals compared with the conventional LTPO scan driver circuits utilizing the clock-supplied bootstrapping method. Additionally, the proposed circuit reduces the positive bias applied to MOx TFTs to alleviate stress conditions effectively. Therefore, the proposed circuit can improve long-term reliability by mitigating the threshold voltage shifts of MOx TFTs.

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Publication Details

Journal
IEEE Journal of the Electron Devices Society
Published
2025-01-01
DOI
https://doi.org/10.1109/jeds.2025.3571171
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

A Low-Power LTPO Scan Driver Circuit Using DC Power Supplied Buffer

Hwarim Im, KeeChan Park, Hui‐Sung Moon, Sang-Woon Lee et al.
IEEE Journal of the Electron Devices Society
Semiconductor Lasers and Optical Devices
article

A Low-Power LTPO Scan Driver Circuit Using DC Power Supplied Buffer

Hwarim Im, KeeChan Park, Hui‐Sung Moon, Sang-Woon Lee, HyeongMin Kim, YiKyoung You, JungSuk Oh, S.S. Kim, Nack‐Hyeon Keum
article en

Abstract

This paper proposes a novel low-temperature polycrystalline silicon and oxide (LTPO) scan driver circuit integrating p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and n-channel metal-oxide (MOx) TFTs. The proposed circuit employs a complementary metal-oxide-semiconductor inverter as an output buffer, allowing low-level voltage to be delivered from a DC power supply to the output node without relying on clock-supplied bootstrapping, which is typically required in most scan driver circuits to drive the output buffer. This design significantly lowers dynamic power consumption by up to 74% by reducing the power consumption due to charging/discharging the parasitic capacitance of the buffer TFT by the clock signals compared with the conventional LTPO scan driver circuits utilizing the clock-supplied bootstrapping method. Additionally, the proposed circuit reduces the positive bias applied to MOx TFTs to alleviate stress conditions effectively. Therefore, the proposed circuit can improve long-term reliability by mitigating the threshold voltage shifts of MOx TFTs.

IEEE Journal of the Electron Devices SocietyVol. 13
Samsung (South Korea) (KR), Konkuk University (KR)
Affordable and clean energy
Openalex Percentile: Top 91%
Semiconductor Lasers and Optical Devices
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