A Reconfigurable Dual-Gate WSe <sub>2</sub> Transistor for In-Situ Digitalizing Image Processing
The advanced machine vision needs massive image data operation and processing functions. However, multi-functional image processing operated in various circuits modules leads to circuit redundancy. In this work, we presented a reconfigurable dual-gate WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistor for integrating in-situ digitalizing image processing in one unit. The transistor had polarity conversion as n-type, p-type and ambipolar-type due to electrostatic doping by dual-gate modulation. The optoelectronic response of transistor covered range from 450 nm ultraviolet to 1550 nm infrared. As switching among the electronic characteristic, the transistor could operate in-situ image processing with Gamma transform, image merging and image comparison.
Authors
- Zhexin Li (ORCID: https://orcid.org/0000-0002-5097-8571)
- Yongchao Yu (ORCID: https://orcid.org/0000-0003-4235-0079)
- Lili Wang (ORCID: https://orcid.org/0000-0002-0422-4277)
- Lingchen Liu
- Zheng Lou (ORCID: https://orcid.org/0000-0001-5744-3759)
- Hailong Wang (ORCID: https://orcid.org/0000-0003-2993-8396)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-05-19
- DOI
- https://doi.org/10.1109/led.2025.3571460
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China