Theoretical Analysis of Vertical β-Ga₂O₃ Schottky Barrier Diodes With p-NiO Field Limiting Rings for High P-FOM Performance

Power devices based on Ga2O3 have been widely studied in recent years. Due to the absence of the p-Ga2O3, the performance of the power devices based on Ga2O3 was largely limited. To get better performance, many Ga2O3 Schottky Barrier Diodes (SBD) with edge termination (ET) were proposed. In this work, p-NiO field limiting rings (FLRs) are implanted into Ga2O3 SBD to improve the power figure of merit (P-FOM) and reduce the complexity of the current high-performance edge termination structure manufacturing process. The implantation of the FLRs can weaken the peak electric field strength and extend the depletion zone in the horizontal direction. Further exploring the influence of some parameters of the device on device performance through TCAD simulation, the breakdown voltage (BV)/specific on-resistance (Ron,sp) of SBD with FLRs is up to 5340 V/3.748 mٷcm2, and P-FOM = BV2/Ron,sp can reach 7.61 GW/cm2, and turn-on voltage (Von) of 0.9 V is achieved. The manufacturing process of the presented Ga2O3 SBD with p-NiO FLRs is relatively simple compared to devices with approximate P-FOM values. This kind of Ga2O3 SBD with FLRs has great promise for future high-power applications.