34.3 W, 172 µJ, 1342 nm picosecond master oscillator power amplifier

A high-power, high-energy 1342 nm picosecond Nd:YVO<sub>4</sub> master oscillator power amplifier (MOPA) laser system was demonstrated, comprising a SESAM mode-locked oscillator, a regenerative amplifier, and four main amplification stages consisting of two double-pass amplifiers and two single-pass amplifiers. Low-doping Nd:YVO<sub>4</sub> crystals with undoped end caps, combined with 880 nm laser diode in-band pumping technique, were used to mitigate thermal effects. A pulse energy as high as 710 µJ at 10 kHz was obtained from the regenerative amplifier. Finally, the system produced 34.3 W, 15.4 ps pulses with 172 µJ energy, and 11 MW peak power at 200 kHz, which is the highest average power of 1.34 µm picosecond lasers so far. The beam quality was well maintained, with an <i>M</i><sup>2</sup> factor of ∼1.31, using a spherical aberration self-compensation method. The power stability was RMS = 0.89% over 3 hours.

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Publication Details

Journal
Optics Express
Published
2025-05-19
DOI
https://doi.org/10.1364/oe.564512
Citations
1
Primary Topic
Solid State Laser Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

34.3 W, 172 µJ, 1342 nm picosecond master oscillator power amplifier

J. C. Li, Chunyan Jia, Xue Zhou, Yuan Yao et al.
1 citations
Optics Express
Solid State Laser Technologies
0.73
article

34.3 W, 172 µJ, 1342 nm picosecond master oscillator power amplifier

J. C. Li, Chunyan Jia, Xue Zhou, Yuan Yao, Binbin Yao, Jiayu Zhang, Chong Wang, Tiejun Ma, Shan Huang, Hongkun Nie, Baitao Zhang, Runze Liang
article en
1 citations

Abstract

A high-power, high-energy 1342 nm picosecond Nd:YVO<sub>4</sub> master oscillator power amplifier (MOPA) laser system was demonstrated, comprising a SESAM mode-locked oscillator, a regenerative amplifier, and four main amplification stages consisting of two double-pass amplifiers and two single-pass amplifiers. Low-doping Nd:YVO<sub>4</sub> crystals with undoped end caps, combined with 880 nm laser diode in-band pumping technique, were used to mitigate thermal effects. A pulse energy as high as 710 µJ at 10 kHz was obtained from the regenerative amplifier. Finally, the system produced 34.3 W, 15.4 ps pulses with 172 µJ energy, and 11 MW peak power at 200 kHz, which is the highest average power of 1.34 µm picosecond lasers so far. The beam quality was well maintained, with an <i>M</i><sup>2</sup> factor of ∼1.31, using a spherical aberration self-compensation method. The power stability was RMS = 0.89% over 3 hours.

Optics ExpressVol. 33(12)
University of Science and Technology of China (CN)
National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 28%
Solid State Laser Technologies
0.73
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34.3 W, 172 µJ, 1342 nm picosecond master oscillator power amplifier — J. C. Li, Chunyan Jia, et al. · Optics Express (2025) | TGRS Research Map | TGRS