High-Energy Storage Performance in La-Doped Lead Zirconate Films on Flexible Mica Substrates

Flexible thin-film capacitors have gained a lot of attention in energy storage applications because of their high energy storage densities and efficient charge-discharge performances. Among these materials, antiferroelectric compounds with low residual polarization and strong saturation polarization have shown great promise. However, their comparatively low breakdown strength continues to be a major issue restricting further developments in their energy storage performance. While La³⁺ doping has been explored as a means to enhance the energy storage capabilities of antiferroelectric thin films, the specific influence of La³⁺ on breakdown strength and the underlying mechanism of phase transitions have not been thoroughly investigated in existing research. In this study, Pb_1-3x/2La_xZrO₃ thin films were successfully synthesized and deposited on mica substrates via the sol-gel process. By varying the concentration of La³⁺ ions, a detailed examination of the films' microstructures, electrical properties, and energy storage performances was carried out to better understand how La³⁺ doping influences both breakdown strength and energy storage characteristics. The results show that doping with La³⁺ significantly improves the breakdown strength of the films, reduces the critical phase transition electric field (<i>E</i>_F-<i>E</i>_A), and enhances their energy storage capabilities. Notably, the Pb_0.91La_0.06ZrO₃ thin film achieved an impressive energy storage density of 34.9 J/cm³ with an efficiency of 58.3%, and at the maximum electric field strength of 1541 kV/cm, the recoverable energy density (<i>W</i>_rec) was 385% greater than that of the PbZrO₃ film. Additionally, the film still maintains good energy storage performance after 10⁷ cycles and 10⁴ bending cycles. These findings highlight the potential of flexible antiferroelectric Pb_0.91La_0.06ZrO₃ thin films for future energy storage applications.