SrTiO<sub>3</sub>-based memristor with a metal/oxide bilayer electrode for high recognition accuracy neuromorphic computing
A Pt/LSMO bilayer electrode memristor achieves on/off ratio = 1.2 × 10 5 , V set = 0.58 V. It emulates biological synapses, executes decimal logic operations, and enables 95.4% traffic sign recognition accuracy with 80% robustness under 10% noise.
Authors
- Guorui Yin (ORCID: https://orcid.org/0000-0002-1969-0078)
- Jie Su (ORCID: https://orcid.org/0000-0001-7063-3100)
- Wenshuo Wu
- Hao Liu (ORCID: https://orcid.org/0000-0003-0266-9472)
- Yan Wang (ORCID: https://orcid.org/0000-0002-0070-8098)
- Minghao Zhang (ORCID: https://orcid.org/0009-0003-3133-2497)
Institutions
- Qingdao University (CN)
- Qilu Hospital of Shandong University (CN)
- Dezhou University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00406c
- Citations
- 3
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 2.19