INVESTIGATION OF THE Se–SrGa₂Se₄ SYSTEM

To synthesize alloys of the Se-SrGaSe system, the SrGaSe compound was first obtained from the binary compounds SrSe and GaSe via the ampoule method in the temperature range of 1000-1200C.Subsequently, alloys were synthesized based on Se and SrGaSe.Single crystals of the Sr thiogallate were grown using the Bridgman method.For the first time, the phase equilibria of the Se-SrGaSe system were studied through differential thermal analysis (DTA), X-ray phase analysis (XRD), microstructural analysis (MSA), as well as density and microhardness measurements, and the T-x phase diagram was constructed.A eutectic reaction was identified within the GaSe concentration range.The SrGaSe compound was found to melt congruently at 1110C, crystallizing in the orthorhombic system, with lattice parameters determined as a = 21.56, b = 21.45, and c = 12.75 .The physical properties were determined on a solid solution based on SrGaSe containing 6 mol% Se.The SrGaSe compound has potential applications in optoelectronics, lasers, radiation detectors, dosimetric systems, photovoltaic materials, solar panels, and can also be used in the synthesis of phosphor materials when activated with rare earth elements.

Publication Details

Journal
BSU- Journal of Chemistry and Material Sciences
Published
2025-01-01
DOI
https://doi.org/10.30546/209501.201.2024.1.04.051
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

INVESTIGATION OF THE Se–SrGa₂Se₄ SYSTEM

BSU- Journal of Chemistry and Material Sciences
Chalcogenide Semiconductor Thin Films
article

INVESTIGATION OF THE Se–SrGa₂Se₄ SYSTEM

article en

Abstract

To synthesize alloys of the Se-SrGaSe system, the SrGaSe compound was first obtained from the binary compounds SrSe and GaSe via the ampoule method in the temperature range of 1000-1200C.Subsequently, alloys were synthesized based on Se and SrGaSe.Single crystals of the Sr thiogallate were grown using the Bridgman method.For the first time, the phase equilibria of the Se-SrGaSe system were studied through differential thermal analysis (DTA), X-ray phase analysis (XRD), microstructural analysis (MSA), as well as density and microhardness measurements, and the T-x phase diagram was constructed.A eutectic reaction was identified within the GaSe concentration range.The SrGaSe compound was found to melt congruently at 1110C, crystallizing in the orthorhombic system, with lattice parameters determined as a = 21.56, b = 21.45, and c = 12.75 .The physical properties were determined on a solid solution based on SrGaSe containing 6 mol% Se.The SrGaSe compound has potential applications in optoelectronics, lasers, radiation detectors, dosimetric systems, photovoltaic materials, solar panels, and can also be used in the synthesis of phosphor materials when activated with rare earth elements.

BSU- Journal of Chemistry and Material Sciences
Openalex Percentile: Top 91%
Chalcogenide Semiconductor Thin Films
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