INVESTIGATION OF THE Se–SrGa₂Se₄ SYSTEM
To synthesize alloys of the Se-SrGaSe system, the SrGaSe compound was first obtained from the binary compounds SrSe and GaSe via the ampoule method in the temperature range of 1000-1200C.Subsequently, alloys were synthesized based on Se and SrGaSe.Single crystals of the Sr thiogallate were grown using the Bridgman method.For the first time, the phase equilibria of the Se-SrGaSe system were studied through differential thermal analysis (DTA), X-ray phase analysis (XRD), microstructural analysis (MSA), as well as density and microhardness measurements, and the T-x phase diagram was constructed.A eutectic reaction was identified within the GaSe concentration range.The SrGaSe compound was found to melt congruently at 1110C, crystallizing in the orthorhombic system, with lattice parameters determined as a = 21.56, b = 21.45, and c = 12.75 .The physical properties were determined on a solid solution based on SrGaSe containing 6 mol% Se.The SrGaSe compound has potential applications in optoelectronics, lasers, radiation detectors, dosimetric systems, photovoltaic materials, solar panels, and can also be used in the synthesis of phosphor materials when activated with rare earth elements.
Publication Details
- Journal
- BSU- Journal of Chemistry and Material Sciences
- Published
- 2025-01-01
- DOI
- https://doi.org/10.30546/209501.201.2024.1.04.051
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00