A 80 GHz GaN HEMT Amplifier Using Common Gate Topology Loading Open Stub at Gate
A 80 GHz amplifier was demonstrated using GaN HEMT which has <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.15 \mu m$</tex> gate length and 100 GHz fmax. The amplifier applies gain boosting technique using open stub at the gate with common gate structure. Shorter length showed higher frequency response. The amplifier which had <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$310 \mu m$</tex> lengthstub showed 3.5dB at 82.4 GHz.
Authors
- K. Sakuno
- Shinji Hara
- E. Suematsu
Institutions
- Nagoya University (JP)
Publication Details
- Published
- 2025-04-15
- DOI
- https://doi.org/10.1109/imbioc63524.2025.10989726
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Institute of Information and Communications Technology