Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films
To guide the process optimization of HfO2-based ferroelectric (FE) devices, the effects of oxidants (O3/H2O) during atomic layer deposition (ALD) process of Hf0.5Zr0.5O2 films are systematically investigated. The results indicate that using the stronger oxidant (O3) leads to higher remanent polarization (Pr) but poorer endurance, with significant leakage deterioration after wakeup and a pronounced imprint effect during cycling. In contrast, the weaker oxidant (H2O) results in lower Pr but improves polarization switching speed. The influence of oxidants on pre-existing defects and interfacial reactions may be potential key factors. Our findings provide valuable insights for process optimization tailored to specific application requirements.
Authors
- Pengpeng Sang (ORCID: https://orcid.org/0000-0001-8071-3024)
- Jiezhi Chen (ORCID: https://orcid.org/0000-0003-2996-1406)
- Xiaoyu Dou (ORCID: https://orcid.org/0009-0005-3033-409X)
- Y. Thomas Hou (ORCID: https://orcid.org/0000-0003-3716-5768)
- Yaoyu He
- Xuepeng Zhan (ORCID: https://orcid.org/0000-0002-1701-9301)
- Jixuan Wu (ORCID: https://orcid.org/0000-0002-3207-9724)
- Xiaolei Wang (ORCID: https://orcid.org/0000-0001-9431-0058)
- Xiaopeng Li (ORCID: https://orcid.org/0009-0008-2790-5797)
- Yuwei Qu (ORCID: https://orcid.org/0000-0003-1179-2800)
Institutions
- Shandong University (CN)
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Journal
- IEEE Journal of the Electron Devices Society
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jeds.2025.3570717
- Citations
- 3
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Shandong Province