Near-infrared scintillation response of Bi2O3-doped Al2O3–GeO2 glasses

Al 2 O 3 –GeO 2 glasses doped with Bi 2 O 3 (0.1 %, 0.5 %, and 1.0 %) were fabricated for the development of near-infrared scintillators. The Bi 2 O 3 -doped Al 2 O 3 –GeO 2 glasses showed a broadband emission peaking at approximately 1100–1200 nm in photoluminescence, and the broadband emission should be related to the 3 P 1 → 3 P 0 transition of Bi + . Furthermore, the broad peak was also detected at approximately 1100 nm under X-ray radiation, and the 0.1 % Bi 2 O 3 -doped Al 2 O 3 –GeO 2 glass showed the highest photoluminescence and scintillation intensity. Moreover, the near-infrared scintillation performance was investigated using a InGaAs photodiode, and the minimum measurable dose rate of the 0.1 % Bi 2 O 3 -doped Al 2 O 3 –GeO 2 glass was about 25 mGy/h that was lower than that of some inorganic single crystals such as SrY 2 O 4 :Nd. • The Bi 2 O 3 -doped Al 2 O 3 –GeO 2 glasses were prepared by melt-quenching method. • The Bi 2 O 3 -doped glasses exhibited luminescence possibly due to the transitions of Bi + . • The detectable X-ray dose rate limit of the Bi 2 O 3 -doped glass was 25 mGy/h.