Synthesis of Large‐Area 2D Transition Metal Dichalcogenides via Chemical Vapor Deposition

Abstract Transition metal dichalcogenides (TMDCs), with excellent merits such as atomic‐layer thickness, tunable bandgaps, high carrier mobility and good compatibility with traditional semiconductor processes, are one of the promising candidates for the next generation of semiconductor channel materials, expected to overcome the physical limitations of conventional silicon‐based materials and extend Moore's Law. Recognizing the vast potential of TMDCs in revolutionizing semiconductor technology, researchers are intensively exploring various preparation techniques for industrialization. Among these, chemical vapor deposition (CVD) has emerged as a frontrunner to synthesize high‐quality and large‐area TMDCs film. In this review, the focus is on the current progress in the growth of large‐area TMDCs films via the CVD method. Insights into the preparation of large‐area TMDCs, including growth strategies and growth mechanisms, are first presented. Second, the transfer approaches are summarized, covering wet and dry transfer methods for the large‐area TMDCs. Third, their applications in logic circuits, optoelectronics and displays are explored. In the end, a summary and outlook are provided in terms of the current challenges and future research directions, inspiring further research and development efforts in this area.