Elimination of space charge effects in passivation films: the key to substantially enhancing the dielectric properties of tantalum oxide films
This study reveals for the first time the influence mechanism of the dual-layer structure in the native passivation film on the dielectric breakdown of Ta 2 O 5 , providing critical insights for enhancing the reliability of tantalum capacitors.
Authors
- Jiping Zhao (ORCID: https://orcid.org/0000-0002-7698-6940)
- Jingsong Xu (ORCID: https://orcid.org/0000-0003-3001-1002)
- Hongbing Cai (ORCID: https://orcid.org/0000-0003-3186-1041)
- Beibei Wang (ORCID: https://orcid.org/0000-0002-9148-5044)
- Jingjing Liu (ORCID: https://orcid.org/0000-0002-3787-1729)
- Xiaoxuan Zhu
Institutions
- Jiangsu Normal University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01178g
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73