Study on the adsorption behavior, and electronic and gas-sensing properties of SF<sub>6</sub> decomposition products on Co- and Ni-modified g-C<sub>3</sub>N<sub>4</sub> monolayer films

This work addresses potential failures in SF<sub>6</sub> gas-insulated equipment, including insulation degradation and device breakdown caused by decomposition products. This work employs first-principles (DFT) calculations to systematically investigate the modulation mechanism by which transition metal (Co, Ni) doping influences the adsorption performance of two-dimensional graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) toward SF<sub>6</sub> decomposition gases (H<sub>2</sub>S, SO<sub>2</sub>, SOF<sub>2</sub>, and SO<sub>2</sub>F<sub>2</sub>). The results demonstrate that transition metal doping significantly alters the electronic structure of g-C<sub>3</sub>N<sub>4</sub>: Ni doping reduces the bandgap from 1.535 eV to 0.312 eV, whereas Co doping decreases it to 0.828 eV. This electronic structure modulation transforms the material's adsorption behavior from weak physical adsorption to strong chemical adsorption. Specifically, the Ni-g-C<sub>3</sub>N<sub>4</sub> system exhibits adsorption energies of -2.251 eV, -1.562 eV, -1.976 eV, and -1.900 eV for SO<sub>2</sub>, H<sub>2</sub>S, SOF<sub>2</sub>, and SO<sub>2</sub>F<sub>2</sub>, respectively, which are higher than those observed for the Co-g-C<sub>3</sub>N<sub>4</sub> system. Differential charge density and frontier orbital analyses indicate that the enhanced adsorption is due to strong interactions between the transition metal 3d orbitals and the polar atoms (S, O, and F) in the gas molecules. Notably, upon H<sub>2</sub>S adsorption, the bandgap of the Ni-g-C<sub>3</sub>N<sub>4</sub> system further decreases to 0.245 eV, suggesting potential for ultra-high sensitivity detection. These findings offer new insights for the development of high-performance sensors for SF<sub>6</sub> decomposition products: Ni doping is ideally suited for scenarios demanding extreme detection sensitivity, while Co doping may provide advantages in terms of long-term stability. Overall, this study not only deepens the understanding of electronic structure modulation in g-C<sub>3</sub>N<sub>4</sub>-based gas-sensing materials but also establishes a theoretical foundation for the design of early-warning sensors for SF<sub>6</sub> insulation faults in power systems.

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Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp01054c
Citations
8
Primary Topic
Gas Sensing Nanomaterials and Sensors
Type
article
Field-Weighted Citation Impact
5.84

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article

Study on the adsorption behavior, and electronic and gas-sensing properties of SF6 decomposition products on Co- and Ni-modified g-C3N4 monolayer films

Qiuping Yang, Jin Ye, Zhiyuan Zhu, M. Y. Zhang
8 citations
Physical Chemistry Chemical Physics
Gas Sensing Nanomaterials and Sensors
5.84
article

Study on the adsorption behavior, and electronic and gas-sensing properties of SF6 decomposition products on Co- and Ni-modified g-C3N4 monolayer films

Qiuping Yang, Jin Ye, Zhiyuan Zhu, M. Y. Zhang
article en
8 citations

Abstract

This work addresses potential failures in SF<sub>6</sub> gas-insulated equipment, including insulation degradation and device breakdown caused by decomposition products. This work employs first-principles (DFT) calculations to systematically investigate the modulation mechanism by which transition metal (Co, Ni) doping influences the adsorption performance of two-dimensional graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) toward SF<sub>6</sub> decomposition gases (H<sub>2</sub>S, SO<sub>2</sub>, SOF<sub>2</sub>, and SO<sub>2</sub>F<sub>2</sub>). The results demonstrate that transition metal doping significantly alters the electronic structure of g-C<sub>3</sub>N<sub>4</sub>: Ni doping reduces the bandgap from 1.535 eV to 0.312 eV, whereas Co doping decreases it to 0.828 eV. This electronic structure modulation transforms the material's adsorption behavior from weak physical adsorption to strong chemical adsorption. Specifically, the Ni-g-C<sub>3</sub>N<sub>4</sub> system exhibits adsorption energies of -2.251 eV, -1.562 eV, -1.976 eV, and -1.900 eV for SO<sub>2</sub>, H<sub>2</sub>S, SOF<sub>2</sub>, and SO<sub>2</sub>F<sub>2</sub>, respectively, which are higher than those observed for the Co-g-C<sub>3</sub>N<sub>4</sub> system. Differential charge density and frontier orbital analyses indicate that the enhanced adsorption is due to strong interactions between the transition metal 3d orbitals and the polar atoms (S, O, and F) in the gas molecules. Notably, upon H<sub>2</sub>S adsorption, the bandgap of the Ni-g-C<sub>3</sub>N<sub>4</sub> system further decreases to 0.245 eV, suggesting potential for ultra-high sensitivity detection. These findings offer new insights for the development of high-performance sensors for SF<sub>6</sub> decomposition products: Ni doping is ideally suited for scenarios demanding extreme detection sensitivity, while Co doping may provide advantages in terms of long-term stability. Overall, this study not only deepens the understanding of electronic structure modulation in g-C<sub>3</sub>N<sub>4</sub>-based gas-sensing materials but also establishes a theoretical foundation for the design of early-warning sensors for SF<sub>6</sub> insulation faults in power systems.

Physical Chemistry Chemical PhysicsVol. 27(22)
Southwest University (CN), Henan Provincial Center for Disease Control and Prevention (CN)
Southwest University, Chongqing Municipal Education Commission
Openalex Percentile: Top 4%
Gas Sensing Nanomaterials and Sensors
5.84
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