Nonvolatile Ferroelectric Manipulation of Topological States in Two-Dimensional Multiferroic van der Waals Heterostructures

Multiferroic materials, including tunable ferrovalley characteristics and band topology, enabled by ferroelectric control at the nanoscale, possess significant potential for technology advances in next-generation magnetoelectric and spintronic applications. However, the realization of this fascinating multifunctionality in nanoscale systems with perpendicular magnetic anisotropy remains unexplored. Here, we propose a class of van der Waals multiferroic heterostructures comprising ferromagnetic, ferrovalley, and ferroelectric layers that exhibit switchable topological states in response to ferroelectric polarization. Taking the In<sub>2</sub>Se<sub>3</sub>/RuClBr/CrI<sub>3</sub> heterostructure as an example, our first-principles calculations reveal its perpendicular magnetic anisotropy and band topology transition under different ferroelectric polarizations. When the ferroelectric polarization is downward, the heterostructure exhibits a type-III band alignment with metallic properties. Remarkably, when the polarization direction is reversed upward, it demonstrates a type-I band alignment accompanied by the emergence of a quantum anomalous Hall effect. Consequently, by manipulating the ferroelectric polarization direction, the multiferroic heterostructure can switch between normal metal behavior and a nonvolatile topological insulator. This study not only proposes a viable approach for tailoring topological states through multiferroic heterostructures but also demonstrates its potential significance in advancing multifunctional spintronic applications in ferroelectronics, valleytronics, and topology.

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Publication Details

Journal
ACS Nano
Published
2025-05-15
DOI
https://doi.org/10.1021/acsnano.4c15950
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55

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article

Nonvolatile Ferroelectric Manipulation of Topological States in Two-Dimensional Multiferroic van der Waals Heterostructures

Shouguo Wang, Yanzhe Zhao, He Huang, Xinqi Zheng et al.
3 citations
ACS Nano
2D Materials and Applications
1.55
article

Nonvolatile Ferroelectric Manipulation of Topological States in Two-Dimensional Multiferroic van der Waals Heterostructures

Shouguo Wang, Yanzhe Zhao, He Huang, Xinqi Zheng, Yanfei Wu, Chuang LIU, Zeyu Zhang, Jingyan Zhang, Jiapeng Zhao, Liming Wang, Shiming Zhou, Guanxiong Qiao
article en
3 citations

Abstract

Multiferroic materials, including tunable ferrovalley characteristics and band topology, enabled by ferroelectric control at the nanoscale, possess significant potential for technology advances in next-generation magnetoelectric and spintronic applications. However, the realization of this fascinating multifunctionality in nanoscale systems with perpendicular magnetic anisotropy remains unexplored. Here, we propose a class of van der Waals multiferroic heterostructures comprising ferromagnetic, ferrovalley, and ferroelectric layers that exhibit switchable topological states in response to ferroelectric polarization. Taking the In<sub>2</sub>Se<sub>3</sub>/RuClBr/CrI<sub>3</sub> heterostructure as an example, our first-principles calculations reveal its perpendicular magnetic anisotropy and band topology transition under different ferroelectric polarizations. When the ferroelectric polarization is downward, the heterostructure exhibits a type-III band alignment with metallic properties. Remarkably, when the polarization direction is reversed upward, it demonstrates a type-I band alignment accompanied by the emergence of a quantum anomalous Hall effect. Consequently, by manipulating the ferroelectric polarization direction, the multiferroic heterostructure can switch between normal metal behavior and a nonvolatile topological insulator. This study not only proposes a viable approach for tailoring topological states through multiferroic heterostructures but also demonstrates its potential significance in advancing multifunctional spintronic applications in ferroelectronics, valleytronics, and topology.

ACS NanoVol. 19(20)
Anhui University (CN), Division of Materials Science and Engineering (AU), Beijing Advanced Sciences and Innovation Center (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 18%
2D Materials and Applications
1.55
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