Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage Regimes

Protection capability of high holding voltage (HHV) unipolar and dual-direction SCR devices is studied using TLP, long pulse measurements and mixed-mode numerical simulation toward application for on-chip solutions. The effect of the holding voltage reduction with the increase of electro-thermal stress time is discussed from the point of view of the transient latchup risk.

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Published
2025-03-30
DOI
https://doi.org/10.1109/irps48204.2025.10983331
Primary Topic
Electrical Fault Detection and Protection
Type
article
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article

Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage Regimes

Andrei Shibkov, В.А. Ващенко
Electrical Fault Detection and Protection
article

Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage Regimes

Andrei Shibkov, В.А. Ващенко
article en

Abstract

Protection capability of high holding voltage (HHV) unipolar and dual-direction SCR devices is studied using TLP, long pulse measurements and mixed-mode numerical simulation toward application for on-chip solutions. The effect of the holding voltage reduction with the increase of electro-thermal stress time is discussed from the point of view of the transient latchup risk.

Analog Devices (United States) (US), Angstrom Designs (United States) (US)
Affordable and clean energy
Openalex Percentile: Top 91%
Electrical Fault Detection and Protection
DOISourceOpenAlex
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Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage Regimes — Andrei Shibkov, В.А. Ващенко · (2025) | TGRS Research Map | TGRS