A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS

This paper presents a 28nm CMOS simulation study that explores aging-induced accuracy and frequency degradation in analog Compute-In-Memory (ACIM) and digital Compute-In-Memory (DCIM) systems for machine learning accelerators. We show that Bias Temperature Instability (BTI) has a greater impact than Hot Carrier Injection (HCI). Simulation results also show that Analog-Input-Analog-Computing (AIAC) is more vulnerable to aging than Digital-Input-Analog-Computing (DIAC) and DCIM.

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Publication Details

Published
2025-03-30
DOI
https://doi.org/10.1109/irps48204.2025.10983801
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS

Saibal Mukhopadhyay, Shida Zhang, Wei-Chun Wang, Carlos Tokunaga
Semiconductor materials and devices
article

A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS

Saibal Mukhopadhyay, Shida Zhang, Wei-Chun Wang, Carlos Tokunaga
article en

Abstract

This paper presents a 28nm CMOS simulation study that explores aging-induced accuracy and frequency degradation in analog Compute-In-Memory (ACIM) and digital Compute-In-Memory (DCIM) systems for machine learning accelerators. We show that Bias Temperature Instability (BTI) has a greater impact than Hot Carrier Injection (HCI). Simulation results also show that Analog-Input-Analog-Computing (AIAC) is more vulnerable to aging than Digital-Input-Analog-Computing (DIAC) and DCIM.

Georgia Institute of Technology (US), Intel (United States) (US)
Affordable and clean energy
Openalex Percentile: Top 91%
Semiconductor materials and devices
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