A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOS
This paper presents a 28nm CMOS simulation study that explores aging-induced accuracy and frequency degradation in analog Compute-In-Memory (ACIM) and digital Compute-In-Memory (DCIM) systems for machine learning accelerators. We show that Bias Temperature Instability (BTI) has a greater impact than Hot Carrier Injection (HCI). Simulation results also show that Analog-Input-Analog-Computing (AIAC) is more vulnerable to aging than Digital-Input-Analog-Computing (DIAC) and DCIM.
Authors
- Saibal Mukhopadhyay (ORCID: https://orcid.org/0000-0002-8894-3390)
- Shida Zhang (ORCID: https://orcid.org/0000-0003-4187-4428)
- Wei-Chun Wang
- Carlos Tokunaga
Institutions
- Georgia Institute of Technology (US)
- Intel (United States) (US)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983801
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00