First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga<sub>2</sub>O<sub>3</sub>Based Devices
In this work, for the first time, we report transient breakdown voltage of on-wafer β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>Schottky barrier diodes (SBDs) in ultra-short (sub-µs duration) pulses based on an electrostatic discharge system setup. β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>SBDs show a dynamic breakdown of 626 V in 10 ns pulse excitations, 320 V higher than the static breakdown. The device can withstand overvoltage pulse stresses for varying number of switching cycles at pulse durations below 100 ns. Detailed experimental analysis reveals the role of trap states and trapping-induced temporal and spatial field evolution in the observed device behavior.
Authors
- Mayank Shrivastava (ORCID: https://orcid.org/0000-0003-1005-040X)
- Harsh Raj (ORCID: https://orcid.org/0009-0001-0704-2786)
Institutions
- Indian Institute of Science Bangalore (IN)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983578
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43