Demonstration of the Benefits of Measuring SiC MOSFET BTI using a Triple Sense Method

Measurements of threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_\mathrm{T})$</tex> and threshold shift <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{dV}_{\mathrm{T}^{\text{shift}}}$</tex> of SiC MOSFET devices are highly influenced by interface and border (near-interface) traps which create hysteretic effects. Thus, the measurement approach used can greatly influence the measured <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_\mathrm{T}$</tex> and shift. Here the benefit of measuring bias temperature instability (BTI) using a triple-sense method is demonstrated, as it gives more comprehensive information than simple single-point <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_\mathrm{T}$</tex> measurement approaches. The triple-sense method allows extraction of both quasi-permanent and transient <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_\mathrm{T}$</tex> changes, as well as VT hysteresis and any change in hysteresis during BTI.