Read Voltage Dependency of Random Telegraph Noise in the Intermediate State of TaOx-based ReRAM
This work investigates random telegraph noise (RTN) behavior in the intermediate resistance states of 40nm TaOx-based analog ReRAM. Uniquely in the intermediate resistance states, both the frequency and amplitude of RTN fluctuations tend to increase with the read voltage. Considering the trade-off between increasing them and enhancing margins among adjacent resistance states as read voltage rises, a 0.2V readout minimizes RTN-induced misdetection of resistance states, achieving a significantly low error rate of 0.19%.
Authors
- Hiroyuki Akinaga (ORCID: https://orcid.org/0000-0002-5521-3148)
- Ken Takeuchi (ORCID: https://orcid.org/0000-0002-9345-6503)
- Naoko Misawa
- Hisashi Shima (ORCID: https://orcid.org/0000-0002-9521-7362)
- Chihiro Matsui (ORCID: https://orcid.org/0000-0003-4594-6839)
- Yasuhisa Naitoh (ORCID: https://orcid.org/0000-0003-2431-9625)
- Kenshin Yamauchi
Institutions
- Tokyo University of Information Sciences (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983826
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46