Copper Damascene Based Heterogeneous Integration of GaN with CMOS on 200 mm Si Substrates (Invited)

Wafer scale heterogeneous integration (HI) of GaN monolithic microwave integrated circuits (MMICs) with CMOS is an attractive approach for lattice spacing constrained, digital-beam-forming (DBF), millimeter-wave phased arrays. Raytheon is developing a silicon foundry based GaN MMIC process on 200 mm Si and heterogeneously integrating it at the wafer scale with 200 mm silicon-on-insulator (SOI) CMOS. Experimental results utilizing this heterogeneously integrated MMIC (HIMMIC) approach are presented. This GaN on Si MMIC process is available for licensing.