Interplay Between Charge Defects and Ferroelectric Reliability: From Wake-Up, Imprint, Fatigue to Breakdown

The low-switching power and CMOS compatibility of hafnium-zirconium oxide-based ferroelectrics have attracted significant interest in research and industry. However, concerns about their reliability hinder practical adoption. This paper examines how charge defects interfere with polarization switching, leading to wake-up, imprint, fatigue, and eventual breakdown. Our analyses highlight the critical role of interface properties in these processes.