A Critical Investigation of Hot Carrier Degradation in Low V<sub>T</sub>NMOSFETs in DRAM
In this paper, Hot Carrier Degradation (HCD/HCI) characterization results measured on Low V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs) used in Dynamic Random Access Memory (DRAM) for mobile and automotive applications are presented. Dependence of HCD on Gate Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GSTR</inf>), Drain Voltage Stress (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf>), and Stress Temperature (T) are investigated and analyzed. Degradation mechanisms at various conditions are proposed based on the experimental signature of the measured data. Parametric degradation at end-of-life (EOL) is predicted with conventional exponential V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> model and benchmarked against an augmented V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSTR</inf> dependence model that is calibrated across wide range of data.
Authors
- Sangwoo Pae
- N.-H. Lee
- G.-J. Kim
- Donghee Son (ORCID: https://orcid.org/0000-0002-3772-8009)
- G. Yang (ORCID: https://orcid.org/0000-0001-9815-3395)
- Nusrat Choudhury (ORCID: https://orcid.org/0000-0003-3364-8594)
- YC. Hwang
- S. Lee
- SB. Ko
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983312
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00