On How to Implement Experimentally Obtained Defect Characteristics in SiC Device Simulation
Thermal oxidation of 4H-SiC creates defects in both the SiC bulk and at the SiO2/SiC interface. These defects generated by thermal oxidation and post-oxidation annealing of 4H-SiC were characterized using electrical, capacitance-based techniques. The experiments are analyzed using the standard Schottky-Read-Hall model, which was then implemented in the TCAD model to enable direct integration. Key parameters were included into SiC metal-oxide-semiconductor capacitor and Schottky barrier diode TCAD models to evaluate their impact on device characteristics.
Authors
- Salvatore Race (ORCID: https://orcid.org/0000-0001-8000-2345)
- H. Goncalves de Medeiros (ORCID: https://orcid.org/0009-0006-2686-6517)
- Ulrike Großner (ORCID: https://orcid.org/0000-0002-2495-8550)
- Marianne Etzelmüller Bathen (ORCID: https://orcid.org/0000-0002-6269-3530)
- Ivana Kovacevic-Badstuebner (ORCID: https://orcid.org/0000-0001-6960-2470)
- Piyush Kumar (ORCID: https://orcid.org/0000-0003-3321-2627)
- A. Brandl (ORCID: https://orcid.org/0009-0009-7477-2357)
- H. Scriba
- S. Vuillemin
Institutions
- Advanced Power Electronics (United States) (US)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983342
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.19