Impact of Hydrogen Incorporation on Performance and PBS Instability in Ultrathin ALD-InO<sub>x</sub>FETs
We have investigated the impact of H-impurity in AlO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>-passivated ultrathin ALD-InO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> bottom-gate FETs on positive bias stress (PBS) behavior. While the devices fabricated on SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> with N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> annealing show better current characteristics and long-term stress stability, the devices fabricated on the ALD-deposited AlO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> dielectric show abnormal negative-V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift and change of stability behavior with N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> annealing. These PBS instabilities in ultrathin InO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>, FET are attributed to the H-incorporation from the gate dielectric.
Authors
- Tatsuro Maeda (ORCID: https://orcid.org/0000-0001-9092-6226)
- Yukinori Morita (ORCID: https://orcid.org/0000-0002-2666-6762)
- Hiroyuki Ota
- C. T. Chen (ORCID: https://orcid.org/0000-0001-8721-165X)
- Shinji Migita
- Toshifumi Irisawa
- Kasidit Toprasertpong
Institutions
- Tokyo University of Information Sciences (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983711
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73