Reliability of a 3.3 kV SiC MOSFET .XT

This paper demonstrates the robustness of Infineon's XHP™ 2 modules equipped with 3.3 kV CoolSiC™ MOSFETs. These devices were tested through standard reliability tests such as HTRB, HTGB (or static HV humidity storage tests), through robustness validation approaches investigating gate-switching stability with and without load, and for condensation robustness. Results from non-static HV humidity storage investigations are also discussed proving the ruggedness of these modules under application-relevant electrical conditions.

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Published
2025-03-30
DOI
https://doi.org/10.1109/irps48204.2025.10982931
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Reliability of a 3.3 kV SiC MOSFET .XT

Paul Salmen, Tobias N. Wassermann, Florian Holley
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Silicon Carbide Semiconductor Technologies
article

Reliability of a 3.3 kV SiC MOSFET .XT

Paul Salmen, Tobias N. Wassermann, Florian Holley
article en

Abstract

This paper demonstrates the robustness of Infineon's XHP™ 2 modules equipped with 3.3 kV CoolSiC™ MOSFETs. These devices were tested through standard reliability tests such as HTRB, HTGB (or static HV humidity storage tests), through robustness validation approaches investigating gate-switching stability with and without load, and for condensation robustness. Results from non-static HV humidity storage investigations are also discussed proving the ruggedness of these modules under application-relevant electrical conditions.

Infineon Technologies (Germany) (DE)
Affordable and clean energy
Openalex Percentile: Top 91%
Silicon Carbide Semiconductor Technologies
DOISourceOpenAlex
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Reliability of a 3.3 kV SiC MOSFET .XT — Paul Salmen, Tobias N. Wassermann, et al. · (2025) | TGRS Research Map | TGRS