Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design
This work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance variations with aging. Based on electrical measurements and physical-chemical characterizations, we revealed valuable information on the moisture-induced failure mechanism for Low-k and ULK materials. We have put in evidence that electrical failures within the ULK material are possible under the effect of temperature and humidity. A discussion on the preferential path for Cu diffusion in ULK dielectric is also presented.
Authors
- G. Imbert
- Thierry Parrassin
- Sébastien Gallois-Garreignot
- Léo Mischler (ORCID: https://orcid.org/0009-0003-4051-4524)
- B. Ayoub (ORCID: https://orcid.org/0009-0009-0774-5412)
- Geneviève Duchamp (ORCID: https://orcid.org/0000-0003-4717-6508)
- H. Frémont (ORCID: https://orcid.org/0000-0003-3747-5774)
- F. Belfis
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Bordeaux (FR)
- STMicroelectronics (France) (FR)
- Laboratoire de l'Intégration du Matériau au Système (FR)
- Institut Polytechnique de Bordeaux (FR)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983115
- Primary Topic
- Electronic Packaging and Soldering Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00