NBTI Improvement of HfO<sub>2</sub>/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment
A remote hydrogen plasma (H*) technique in pMOSFETs is studied. The V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift of H*-treated device under NBTI stress at 125 °C decreases by 58%∼74% compare to baseline device. The H* treatment induces EOT increase due to the increase of the dielectric constant of interfacial layer. It shows that the reduction of interface state density is attributed to the passivation of surface dangling bonds by H*, which is located near the conduction band of silicon.
Authors
- Runsheng Wang (ORCID: https://orcid.org/0000-0002-7514-0767)
- Yunfei Shi (ORCID: https://orcid.org/0000-0002-5527-1014)
- Hong Yang (ORCID: https://orcid.org/0000-0003-2860-5901)
- Songyi Jiang
- Qianqian Liu (ORCID: https://orcid.org/0000-0001-5093-2779)
- Junjie Li (ORCID: https://orcid.org/0000-0001-5191-7992)
- Xiaolei Wang (ORCID: https://orcid.org/0000-0002-9750-1906)
- Jun Luo (ORCID: https://orcid.org/0000-0002-5122-6806)
- Shuai Yang (ORCID: https://orcid.org/0000-0001-9798-2239)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983209
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00