A New Methodology to Evaluate Die-Package Level Load-Pull and Ruggedness for RF Long Term Aging for 5G Applications

A new and improved methodology to perform RF long term stress and aging on packaged-die in CMOS technologies is demonstrated under impedance match and mismatch configuration. QFN packaged Power Amplifier (PA) with isoLDMOS as Common Gate operating at 6 GHz 5V VDD is used as a reference design. Package-die load pull using phase shifters improved RF t0 performance and further compared with waferlevel design. RF long term stress showed initial degradation followed by so-called “improvement” after stress, which is correlated to IDD shift. VSWR ruggedness at package-die level was developed using a customized tuner. Pre and post ruggedness PA sweeps after a 3-loop measurement under ∼3:1 ratio showed negligible degradation. Overall, good long-term reliability of 5V isoLDMOS 22FDX is demonstrated, using packaged-die based Load Pull and VSWR ruggedness characterization.