Investigation on Temperature-Dependent Resistance States of 40nm MLC-RRAM Macro

Resistive Random-Access Memory (RRAM) is notable for its multi-level cell (MLC) capabilities, not only boosting the storage density but also enhancing efficiency in computing-in-memory (CIM) architectures. However, its conductance is highly susceptible to temperature fluctuations, challenging practical deployment. Here, we characterize the temperature-dependent resistance states of 40nm RRAM macro, indicating that conductance states have different relations with the temperature. Considering the Poole-Frenkel emission and nanowire transport, a physics model is developed to describe the resistance varying with temperature. Further, we propose the calibration method to reduce the readout and Matrix-Vector Multiplication (MVM) computation errors (5x to 25x), which is crucial for RRAM-based storage and CIM.