Dynamic Reverse Bias Reliability Testing of SiC MOSFETs

This study investigates the reliability of silicon carbide (SiC) power MOSFETs under dv/dt switching conditions and high switching frequencies. This paper examines two distinct testing methods for the dynamic reverse bias (DRB) test designed to apply dv/dt stress on devices. A detailed analysis of the stress procedures associated with each DRB testing method is provided. Furthermore, the dv/dt's achieved, switching frequencies used, and periodic parametric data along with its percentage shift over time are presented. Finally, a failure mode under accelerated test conditions in the passively switching DRB test method is discussed.