Drain-side TDDB for RF applications

In this paper we discuss drain-side TDDB in extended drain MOS (EDMOS) devices exploring the full V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf>, V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> window relevant for RF applications. We present experimental data comparing the off-state condition to the on-state conditions, showing that lifetimes reduce at increasing V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf>, even though voltage across the gate-oxide reduces. We discuss the various mechanisms that play a role during stress to explain our findings.