Advanced Characterization of p/n Junctions in SiC

This study presents the application and correlation of Optical Beam Induced Current (OBIRCH), Electron Beam Induced Current (EBIC) and Electron Beam Induced Resistance Change (EBIRCH) for failure analysis of silicon carbide (SiC) MOSFET devices. Through chemical etching and subsequent probing, detailed imaging of sub-surface depletion zones and precise defect localization were achieved. The EBIC method demonstrated its capability for top-down junction characterization, while EBIRCH provided higher-resolution defect identification. These methods offer valuable improvements for SiC device inspection, ensuring better reliability in high-volume semiconductor production.