Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approach

Hot Carrier Injection (HCI) in drain engineered thick oxide devices (ADDGNFETs) are studied in both conducting (c-HCI) and non-conducting state (nc-HCI). While the initial device architecture improved c-HCI and nc-HCI without compromising RF Figures of Merit, process optimization of these devices was further performed to improve life-time Vd.,max margin. This optimization strategy improved both c-and nc-HCI reliability of the newer architecture without further compromising gate oxide breakdown characteristics, making ADDGNFET architecture further attractive, robust and suitable for demanding RF applications.