Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited)

In this work, we present detailed high-voltage reliability qualification results for the industry's first 1250Vrated lateral GaN HEMT with significant transient overvoltage capability making it ideal for high-reliability industrial applications. Based on the PowiGaN™ technology platform of Power Integrations, the 1250V GaN cascode device shows stable off-state leakage beyond 2000V with a typical breakdown voltage of 2300 V. Results from high voltage off-state reliability stresses HTRB and H3TRB along with hard-switching DHTOL stress are discussed in detail, illustrating for the first time that lateral GaN HEMTs can be a realistic wide band-gap solution at this voltage level. Additionally, we have also demonstrated high-efficiency power supply operation at high-input voltages using a 1250V flyback switcher IC, confirming its readiness for real-world use.