Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited)

Cryogenic CMOS circuits are gaining interest due to the emerging of quantum computing. FDSOI MOSFETs are ideal for low-power circuits at cryogenic temperatures, offering threshold voltage tunability. However, thermal effects can hinder performance gains. The low thermal conductivity of some materials causes local temperature increases, affecting electrical performance. This work addresses self-heating in 28nm FDSOI transistors down to 4K, presenting experimental results on thermal resistance, spatial and temporal extension of thermal effects, discussing their impact on performance and reliability.