Hot-Hole Gate Current and Degradation in N-Type Lateral Drift MOSFETs: Characterization and TCAD Analysis

Hot-hole induced gate current and degradation in advanced n-type lateral drift MOS transistors developed in a 110 nm Bipolar-CMOS-DMOS technology are studied by detailed characterization and TCAD analysis. Hot-hole gate current is characterized by direct measurements and floating-gate method down to the sub-attoampere range. A significant hysteresis in the current versus drain-to-source voltage characteristics is observed due to hole-trapping along the drain drift region. A correlation between ON-state resistance drift and measured gate current is proposed. TCAD simulations including degradation models were carried out and compared with experiments.