Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs
In this study, we investigate IGZO TFT reliability under different positive bias stress voltages and propose an interstitial hydrogen diffusion mechanism as a major contributor to threshold voltage (VT) shift. By combining device fabrication and measurements coupled with TCAD and density functional theory (DFT) modeling of donor and acceptor defects in the IGZO channel, the effect of these defects on device threshold voltage instability was evaluated., where the observed VT shift characteristics are attributed to interactions between diffused hydrogen atoms into the IGZO channel., and their influence on defect densities in the channel.
Authors
- Kyeongjae Cho (ORCID: https://orcid.org/0000-0003-2698-7774)
- Chadwin D. Young (ORCID: https://orcid.org/0000-0003-0690-7423)
- Rodolfo A. Rodriguez-Davila (ORCID: https://orcid.org/0000-0001-8625-8878)
- Mohammad Reza Fat’hi (ORCID: https://orcid.org/0000-0001-6001-1420)
- Md Abdullah Al Mamun (ORCID: https://orcid.org/0000-0001-8490-5891)
- Manuel Quevedo-López (ORCID: https://orcid.org/0000-0002-1867-7584)
- Sourav Dutta (ORCID: https://orcid.org/0000-0001-5722-7909)
- Shumiya Alam
- Milan Pešić (ORCID: https://orcid.org/0000-0002-1788-8945)
- Jongchan Kim (ORCID: https://orcid.org/0009-0008-0158-1755)
- Tanvir H. Pantha
Institutions
- The University of Texas at Dallas (US)
- Applied Materials (United States) (US)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983547
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00