Influence of Starting Material on Final Device in SiC Power Technologies

Assessment of proper material specifications at the substrate level is mandatory for successful high-performances SiC power devices. However, SiC defects must be screened during device fabrication through both by inspection analysis and electrical testing. The study and understanding of killer defects allow for the avoidance of on-field failures. This action must be applied not only for mono SiC material but also for SiC-engineered materials. The correlation between crystallographic defects and 650V MOSFET device failures after reliability testing is presented. Devices that failed the High-Temperature Reverse Bias (HTRB) test were considered. Typical material characteristics can then be correlated with electrical failures.