Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability
In this work, we discuss whether a positive gate bias instability <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\Delta \mathrm{V}_{\mathrm{t}\mathrm{h}})$</tex> issue hampers a G<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$a$</tex>N MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Delta \mathrm{V}_{\mathrm{t}\mathrm{h}}$</tex>, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Delta \mathrm{V}_{\mathrm{t}\mathrm{h}}$</tex> issue.
Authors
- Tian‐Li Wu (ORCID: https://orcid.org/0000-0001-6788-5470)
- Rana ElKashlan (ORCID: https://orcid.org/0000-0003-0576-4344)
- A. Alian (ORCID: https://orcid.org/0000-0003-3463-416X)
- Anshul Gupta (ORCID: https://orcid.org/0000-0003-4276-5397)
- Claude Desset (ORCID: https://orcid.org/0000-0002-5822-1688)
- Nadine Collaert (ORCID: https://orcid.org/0000-0002-8062-3165)
- Mamoun Guenach (ORCID: https://orcid.org/0000-0002-0620-8043)
- Meng‐Che Tsai (ORCID: https://orcid.org/0000-0002-1301-866X)
- Yu‐Chen Kuo (ORCID: https://orcid.org/0000-0002-0569-1002)
- Amit Rathi (ORCID: https://orcid.org/0000-0001-7127-8550)
- Uthayasankaran Peralagu (ORCID: https://orcid.org/0000-0001-9166-4408)
- Hao Yu (ORCID: https://orcid.org/0000-0002-1976-0259)
- Sachin Yadav (ORCID: https://orcid.org/0000-0002-6362-0384)
- Barry O’Sullivan (ORCID: https://orcid.org/0000-0002-9036-8241)
- Bertrand Parvais (ORCID: https://orcid.org/0000-0003-0769-7069)
- Yi Yang (ORCID: https://orcid.org/0000-0003-0693-9193)
- Dongping Xiao (ORCID: https://orcid.org/0000-0002-7581-870X)
- V. Afans'ev
Institutions
- National Yang Ming Chiao Tung University (TW)
- IMEC (BE)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983812
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 3.77