Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth

In this study, we introduce a 5 µm-thick GaN-on-Si pseudo-vertical p-n diode grown with Selective Area Growth (SAG), which exhibits a soft breakdown voltage of -240 V. For the first time, we measured temperature-dependent current-voltage characteristics in the range of 303 to 413 K to explore the origin of leakage conduction in a p-n diodes fabricated via SAG. At low reverse bias levels (0 to -20 V), the primary conduction mechanism is identified as Frenkel-Poole Emission (FPE). In contrast, at higher voltages, up to -100 V, the dominant mechanism shifts to Variable Range Hopping (VRH) throughout the entire temperature range. Additionally, we conducted TCAD simulations and employed Lock-in Thermography (LiT) to investigate the origin of the leakage current and localize it.

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Published
2025-03-30
DOI
https://doi.org/10.1109/irps48204.2025.10982990
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth

Hala El Rammouz, Julien Buckley, S. Moreau, Thomas Kaltsounis et al.
GaN-based semiconductor devices and materials
article

Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth

Hala El Rammouz, Julien Buckley, S. Moreau, Thomas Kaltsounis, Daniel Alquier, Mohammed El Amrani, David Plaza Arguello, Matthew Charles, Mohammed El Amrani
article en

Abstract

In this study, we introduce a 5 µm-thick GaN-on-Si pseudo-vertical p-n diode grown with Selective Area Growth (SAG), which exhibits a soft breakdown voltage of -240 V. For the first time, we measured temperature-dependent current-voltage characteristics in the range of 303 to 413 K to explore the origin of leakage conduction in a p-n diodes fabricated via SAG. At low reverse bias levels (0 to -20 V), the primary conduction mechanism is identified as Frenkel-Poole Emission (FPE). In contrast, at higher voltages, up to -100 V, the dominant mechanism shifts to Variable Range Hopping (VRH) throughout the entire temperature range. Additionally, we conducted TCAD simulations and employed Lock-in Thermography (LiT) to investigate the origin of the leakage current and localize it.

Université de Tours (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR)
Affordable and clean energy
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GaN-based semiconductor devices and materials
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