Comprehensive Study of Saturation Current Impact on LDMOS Reliability

This study found the degradation of Idlin was more severe under off-state stress with Idsat measurement in LDMOS, compared to off-state stress without Idsat measurement. The increase in Idlin after Idsat measurement was linked to hole injection, which worsen the degradation in the off-state region and had a minor impact on the hot carrier injection region. The hole injection was caused by gate impact ionization from channel hot electrons during Idsat measurement. Furthermore, performing multiple Idsat measurements before off-state stress led to greater degradation than a single Idsat measurement during off-state stress, confirming Idsat's influence on off-state stress degradation.