Characterization of Cu and SiCN Adhesion in BEOL Interconnections

This study explores the optimization of semiconductor manufacturing by examining the adhesion properties of the CuSiCN interface in BEOL interconnections. Using nanoscratch and 4-point bending tests, we evaluated the impact of various NH3 plasma surface treatments with different power and time settings. Notably, a 10% increase in these parameters significantly improved adhesion, as confirmed by SEM and XPS analyses. These findings highlight the critical role of fine-tuning surface treatments to enhance interface reliability, improve performance, and ensure durability. However, further increases in power and time may degrade adhesion. This research underscores the importance of precise parameter optimization in developing robust semiconductor devices and sets the stage for future advancements to meet the evolving demands of the industry.