Small Signal Analysis of Degradation and Breakdown in TMD FETs

We propose a small signal analysis methodology which provides distinction between current and field induced breakdown mechanisms and can be used to evaluate WF changes in TMD devices providing a quick way to assess stress history of the TMD channel. The evolution of small signal impedances of pristine device till breakdown under ON, OFF, and Open gate conditions are analyzed using C-f and C-V sweeps. Incremental stressing field across source-drain reveals a metallic nature of channel encountered well before channel ruptures physically. Such an operationally induced modification to MoS2 can be detrimental in defining a reliable operating voltage scheme in future technologies.