Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures
Charge trapping and interface defects strongly influence the reliability behavior of ferroelectric field effect transistors. In order to gain deeper insights into the interactions between ferroelectric polarization and defects, cryogenic conductance and Flicker noise measurements were conducted. They reveal strong changes in the defect energy landscape depending on the polarization state. Moreover, the results herein indicate low noise levels for the low threshold voltage state, favorable for the application in neuromorphic systems at cryogenic temperatures for quantum computing periphery and space.
Authors
- Shouzhuo Yang (ORCID: https://orcid.org/0009-0000-1911-4647)
- Yannick Raffel (ORCID: https://orcid.org/0000-0001-8629-5206)
- Maximilian Lederer (ORCID: https://orcid.org/0000-0002-1739-2747)
- Raik Hoffmann (ORCID: https://orcid.org/0009-0007-9464-6185)
- David Lehninger (ORCID: https://orcid.org/0000-0002-1545-5177)
- Thomas Kämpfe (ORCID: https://orcid.org/0000-0002-4672-8676)
- Konrad Seidel (ORCID: https://orcid.org/0009-0003-5889-4414)
- Ricardo Olivo
- Gerald Gerlach (ORCID: https://orcid.org/0000-0002-7062-9598)
- Maik Simon (ORCID: https://orcid.org/0000-0002-8891-109X)
- Oliver Ostien (ORCID: https://orcid.org/0009-0006-8402-8503)
Institutions
- Fraunhofer Institute for Photonic Microsystems (DE)
- Technische Universität Dresden (DE)
- Technische Universität Braunschweig (DE)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10983580
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00