Optimization of Rate of Rise of Voltage Pulse Through IGBT Gate Signal Tuning Technique

The rate of rise of voltage pulse (RRV), determined by the rising slope of the pulse voltage, is a critical driving condition for stable radio frequency (RF) power output in a magnetron. This study introduces a technique for tuning the required RRV. The proposed method offers the advantage of implementation without the need for additional external components or high-voltage insulation designs exceeding several tens of kilovolts. RRV tuning is achieved by controlling the gate signal of the discharging switch in the pulsed-power modulator. A miniaturized pulsed-power modulator, with the same structural design as the high-voltage pulsed-power modulator of several tens of kilovolts, is fabricated. Various gate signal conditions are applied, and RRV characteristics are verified through pulse discharge experiments. The technique is then extended to the high-voltage pulsed-power modulator, and the output waveform corresponding to the RRV characteristics is analyzed in a linkage test with a 2.8-MW class S-band magnetron. The proposed RRV tuning technique is successfully validated, offering a practical solution for enhancing the performance and stability of magnetron-driven systems.