Temperature and Drift-Aware High-Level PCM-based Array Model for Reliable Hardware IMC Design
In-Memory Computing (IMC) is a promising approach aimed at overcoming the memory wall dilemma. Emerging non-volatile memories, such as Phase-Change Memory (PCM) are fundamental for low-power IMC on the edge. However, PCM device non-idealities, hardware challenges, and application-dependent requirements render the design of IMC particularly complex. In this work, we tackle this challenge by proposing a novel high-level PCM-based model for hardware IMC. For the first time, we consider the temperature effect on PCM conductance stability–a key parameter for reliable PCM-based IMC hardware.
Authors
- E. Esmanhotto
- Xavier Lecoq
- Lorena Anghel (ORCID: https://orcid.org/0000-0001-9569-0072)
- Mario Allegra
- M. Baldo
- Guillaume Prenat (ORCID: https://orcid.org/0000-0003-4899-2101)
- V. Viollet
Institutions
- Institut polytechnique de Grenoble (FR)
- Centre National de la Recherche Scientifique (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- CEA Grenoble (FR)
- STMicroelectronics (France) (FR)
- Spintronique et Technologie des Composants (FR)
- STMicroelectronics (Italy) (IT)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2025-03-30
- DOI
- https://doi.org/10.1109/irps48204.2025.10982734
- Citations
- 3
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.19